Metal Oxide Based Thin Film Transistors for Transparent and Flexible Electronics: Critical Review

Abstract

Abstract
Transparent and flexible electronics is new emerging research area. Various technologies are available for thin film transistors (TFT). Metal oxide semiconductors are suitable because of their high optical transparency, good electrical performance etc. These devices have advantages of a-Si and organic materials also. Advantages of these devices are low cost, low process complexity and temperature, and large-area scalability and large carrier mobility. In this paper research work is compared. This paper is an outcome of comparative analysis of extracts drawn from literature review of 76, IEEE papers ranging from year 1998 to the year 2017, carried out to understand various design modification in thin film transistors for increase use in emerging new technologies. The outcome of the review is presented in form of various findings, which includes techniques and methods used for modification, along with their strengths and weaknesses and the scope for the future work in the area.

Keywords: Thin Film Transistors (TFT), Substrate, Fabrication methods

Cite this Article
Mahima Asthana, Arun Dev Dhar Dwivedi. Metal Oxide Based Thin Film Transistors for Transparent and Flexible Electronics: Critical Review. Journal of Electronic Design Technology. 2018; 9(1): 30–40p.