Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm

Abstract

Abstract

In this work, total 2367 individual simulation-outputs are reported. We have studied the drain characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) having the AlGaN thickness of 22 nm. According to this study, the drain current increases with drain voltage. Also, the drain current increases with gate voltage. The drain current is observed as higher at larger aluminium mole fraction. Also, the drain current is higher at larger doping concentration. The variation in drain current is studied with respect to gate length. This work may be useful to fabricate the biomedical sensors using AlGaN/GaN HEMTs experimentally.

Keywords: Drain voltage, gate voltage, mole fraction, drain current

Cite this Article

Subhadeep Mukhopadhyay, Sanjib Kalita. Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm. Journal of Microwave Engineering & Technologies. 2018; 5(1): 1–12p.