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Gallium Nitride based HEMTs in Nano-Scale Regime

Subhadeep Mukhopadhyay

Abstract


Abstract

In this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping concentration of AlGaN barrier layer. In this work, the formation of 2-DEG is directly demonstrated by the investigation on conduction band engineering. The simulation results of this present work is completely matching with the previously derived mathematical expressions. The reported effect of gate length on electrical characteristics of GaN based nano-electronic double-heterojunction HEMTs is one novelty in this work. The reported investigation on conduction band engineering is another novelty in this work. This reported work will be helpful to experimentally fabricate the biomedical sensors in nano-electronics.

Keywords: Double heterojunction, Aluminium mole fraction, Doping concentration, Gate length

Cite this Article

Subhadeep Mukhopadhyay. Gallium Nitride based HEMTs in Nano-Scale Regime. Journal of Microelectronics and Solid State Devices. 2018; 5(3): 11–21p.



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