Open Access Open Access  Restricted Access Subscription or Fee Access

A Two-Dimensional (2D) Analytical Model for Channel Potential and Threshold Voltage of Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET

Shweta Tripathi

Abstract


In the present paper, an analytical model for the channel potential of short channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET has been presented using parabolic approximation method. Further, the threshold voltage of the device has been calculated using minimum mid channel potential and the result obtained has been compared with the threshold voltage of Triple Material double gate (TMDG) MOSFET in order to show the improvement in the threshold voltage roll-off. The proposed model uncovers the effects of halo region, lengths of the gate materials on the threshold voltage of the DG MOSFET along with all other major geometrical parameters. It has been also shown that TMG-DH DG MOSFET structure alleviates the problems of short channel effects (SCEs) and drain induced barrier lowering (DIBL) more efficiently. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available ATLASTM 2D device simulator.


Keywords


Triple Material Gate-Double Halo (TMG-DH) DG MOSFET; halo doping; short channel effect; drain induced barrier lowering; threshold voltage

Full Text:

PDF

References


G. E. Moore, Cramming More Components onto Integrated Circuits, Electronics 38 (1965) 114-117.

International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA (2010).

Feng Shuai,Zhao Lichuan,Zhang Qingzhu,et al. A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs. Journal of Semiconductors, 2015, 36(4): 046001

Colinge JP, editor. FinFETs and other multi-gate transistors. New York: Springer; 2008.

Solomon PM, Guarini KW, Zhang Y, Chan K, Jones EC, Cohen GM, Krasnoperova A, Ronay M, Dokumaci O, Hovel HJ, Bucchignano JJ. Two gates are better than one [double-gate MOSFET process]. IEEE circuits and devices magazine. 2003 Jan;19(1):48-62.

Razavi P, Orouji AA. Nanoscale triple material double gate (TM-DG) MOSFET for improving short channel effects. In Advances in Electronics and Micro-electronics, 2008. ENICS'08. International Conference on 2008 Sep 29 (pp. 11-14).

Mini Bhartia and Arun Kumar Chatterjee. Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs. Journal of Semiconductors, 2015 36(4): 044003

Long W, Ou H, Kuo JM, Chin KK. Dual-material gate (DMG) field effect transistor. IEEE Transactions on Electron Devices. 1999 May;46(5):865-70.

Goel K, Saxena M, Gupta M, Gupta RS. Modeling and simulation of a nanoscale three-region tri-material gate stack (TRIMGAS) MOSFET for improved carrier transport efficiency and reduced hot-electron effects. IEEE Transactions on Electron Devices. 2006 Jul;53(7):1623-33.

Abdi MA, Djeffal F, Meguellati M, Arar D. Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs. InElectronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on 2009 Dec 13 (pp. 892-895).

Wen Jiao, Liu Qiang, Liu Chang, Wang Yize, Zhang Bo, Xue Zhongying, Di Zengfeng, Yu Wenjie and Zhao Qingtai. Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-wellp-MOSFETs.Journal ofSemiconductors,2016,37(9):094002

Zhang Jin, Liu Yuling, Yan Chenqi, He Yangang and Gao Baohong. Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET. Journal of Semiconductors, 2016, 37(4): 046001

Yu B, Wann CH, Nowak ED, Noda K, Hu C. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's. IEEE Transactions on Electron Devices. 1997 Apr;44(4):627-34.

Pradhan KP, Mohapatra SK, Agarwal PK, Sahu PK, Behera DK, Mishra J. Symmetric DG-MOSFET with gate and channel engineering: A 2-D simulation study. Microelectronics and Solid State Electronics. 2013;2(1):1-9.

Buti TN, Ogura S, Rovedo N, Tobimatsu K, Codella CF. Asymmetrical halo source GOLD drain (HS-GOLD) deep sub-half micron n-MOSFET design for reliability and performance. InElectron Devices Meeting, 1989. IEDM'89. Technical Digest., International 1989 Dec 3 (pp. 617-620).

Bhuyan MH, Khosru QD. An analytical surface potential model for pocket implanted Sub-100 nm n-MOSFET. InElectrical and Computer Engineering, 2008. ICECE 2008. International Conference on 2008 Dec 20 (pp. 442-446).

Mudanai S, Rios R, Shih W, Packan P, Lee SW. Halo Doping: Physical Effects and Compact Modeling. WCM-2006, Proceedings on Compact Disk.;3:644-7.

Frank DJ, Dennard RH, Nowak E, Solomon PM, Taur Y, Wong HS. Device scaling limits of Si MOSFETs and their application dependencies. Proceedings of the IEEE. 2001 Mar;89(3):259-88.

Moldovan O, Cerdeira A, Jiménez D, Raskin JP, Kilchytska V, Flandre D, Collaert N, Iñiguez B. Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications. Solid-state electronics. 2007 May 31;51(5):655-61.

Ghosh P, Haldar S, Gupta RS, Gupta M. An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. Microelectronics Journal. 2012 Jan 31;43(1):17-24.

ATLAS Users Manual, Silvaco International, Santa Clara, CA (2012).

Reddy GV, Kumar MJ. A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation. IEEE Transactions on Nanotechnology. 2005 Mar;4(2):260-8.

Young KK. Short-channel effect in fully depleted SOI MOSFETs. IEEE Transactions on Electron Devices. 1989 Feb;36(2):399-402.

Oh SH, Monroe D, Hergenrother JM. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs. IEEE electron device letters. 2000 Sep;21(9):445-7.

Diagne B, Prégaldiny F, Lallement C, Sallese JM, Krummenacher F. Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects. Solid-State Electronics. 2008 Jan 31;52(1):99-106.

Chen Q, Agrawal B, Meindl JD. A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs. IEEE Transactions on electron devices. 2002 Jun;49(6):1086-90.

Tsormpatzoglou A, Dimitriadis CA, Clerc R, Pananakakis G, Ghibaudo G. Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs. IEEE Transactions on Electron Devices. 2008 Sep;55(9):2512-6.

El Hamid HA, Iniguez B, Guitart JR. Analytical model of the threshold voltage and subthreshold swing of undoped cylindrical gate-all-around-based MOSFETs. IEEE Transactions on Electron Devices. 2007 Mar;54(3):572-9.

Cite this Article

Shweta Tripathi. A Two-Dimensional (2D) Analytical Model for Channel Potential and Threshold Voltage of Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET. Journal of Microelectronics and Solid-State Devices. 2019; 6(2): 13–25p


Refbacks

  • There are currently no refbacks.


Copyright (c) 2019 Journal of Microelectronics and Solid State Devices