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Numerical Simulation of Pentacene based Organic Thin Film Transistor with Inorganic Gate Dielectrics

Arun Dev Dhar Dwivedi, Pooja Kumari

Abstract


This paper presents a 2D numerical simulation and Electrical Characterization of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with different inorganic gate dielectrics materials SiO2, Al2O3 and HfO2 and Electrical parameters including; Mobility (µ), Threshold Voltage (Vt), Ion/Ioff ,Sub threshold slope (SS) and Transconductance (gm) are extracted.


Keywords


component; formatting; style; styling; insertIntroduction

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References


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Cite this Article

Pooja Kumari, Arun Dev Dhar Dwivedi. Numerical Simulation of Pentacene Based Organic Thin Film Transistor with Inorganic Gate Dielectrics. Journal of Microelectronics and Solid-State Devices. 2019; 6(2): 32–38p.


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