GaN-based Double Gate MOSFET (DG-MOSFET)

Abstract

Abstract

GaN is auspicious for high-power, high-temperature devices because of its large bandgap, and high saturation velocity compared with Si. Gallium nitride (GaN) based devices are expected to play an important role to develop the next-generation devices. The performance of GaN-based double gate (DG) MOSFETs have been explored with gate length (L_g) 10.6 nm. The ON-current (I_ON) and OFF-current (I_OFF) are found to be 8.11´10–3 and 6.38605´10–9A/µm respectively, respectively with an applied drain voltage, V_DS=0.75 V. The subthreshold swing (SS) and drain induce barrier lowering (DIBL) are 63.4143 mV/decade and 68.7408 mV/V, respectively.

Keywords: GaN, double gate MOSFET, gate length

Cite this Article

MD. Ibnul Bin Kader Arnub. GaN-based Double Gate MOSFET (DG-MOSFET). Journal of Semiconductor Devices and Circuits. 2018; 5(3): 24–28p.