Impact of Source/Drain Engineering on Performance of Single Gate and Dual Gate Junctionless MOSFET

Abstract

Abstract: This letter is the study on impact of source/drain engineering on Single Gate (SG) and Dual Gate (DG) Junctionless MOSFET. Both the proposed MOSFET have Gate Stacking and highly doped source/drain region, so name suggested is Highly Doped Source Drain Gate Stack Junctionless (HDSD-GSJL) MOSFET. Here we investigate the effect of highly doped source/drain, gate stacking and double gate on junctionless MOSFET. The investigation is performed in relations of Analog and RF figure of merits (FOMs). In the paper major FOMs, output conductance (gd), Transconductance Frequency Product (TFP), cut-off frequency (fT) and transconductance (gm) is analyzed. The result shows that Double Gate HDSD-GSJL MOSFET exhibit high gm, high ft and high TFP. The structure is analyzed and designed using ATLAS 2D TCAD tools.

Keywords: HDSD-GSJL, SG, DG, Analog and RF FOMs

Cite this

Article Jyotsana Singh, Narendra Yadava, R.K. Chauhan. Impact of Source/Drain Engineering on Performance of Single Gate and Dual Gate Junctionless MOSFET. Journal of Semiconductor Devices and Circuits 2019; 6(1): 10–14p.