Reduction of Short Channel Effects with the Variation of Poly Doping and Source/Drain Doping

Abstract

In this paper, the concentration of poly-silicon doping and source/drain doping has been varied to obtain the approximation the OFF state leakage current for N channel MOSFET. A lightly doped NMOS has been designed using 45 nm technology in ATHENA and simulated in ATLAS of SILVACO TCAD tool. After simulation results, it has been observed that as the poly-silicon doping and source drain doping concentrations are decreased, there is a decrease in off state leakage current, substrate current and DIBL. The ON/OFF current ratio has also been increased.

Keywords: NMOS (n-channel MOSFET), TCAD (Technology Computer-Aided Design), MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor), SILVACO, DIBL (Drain Induced Barrier Lowering)

Cite this Article

Nitin Sachdeva, Munish Vashishath, P. K. Bansal. Reduction of Short Channel Effects with the Variation of Poly Doping and Source/Drain Doping. Journal of Semiconductor Devices and Circuits. 2017; 4(3): 35–42p.