Electro Thermal Simulation of AlGaN/GaN HEMT

Abstract

This paper presents electro thermal simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) without AlN layer nucleation layer and AlGaN/GaN HEMT by introducing AlN nucleation layer. With the help of Silvaco ATLAS lattice temperature of the devices figured out. It is observed that self heating in AlGaN/GaN HEMT without AlN nucleation layer is higher than the self heating in AlGaN/GaN HEMT with AlN nucleation layer. Simulation of lattice temperature inside the device has been performed in two cases.  The results shows the lattice temperature decreases by approximately 150ºC in case of AlGaN/GaN HEMT with AlN nucleation layer as compared to lattice temperature in AlGaN/GaN HEMT without AlN nucleation layer. Lattice temperature should be minimized as much as possible because the device temperature is directly related to reliability and life time of the device.