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Numerical Simulation and Parameter Analysis for Pentacene based Organic thin Film Transistor with HfO2 Gate Dielectric

Arun Dev Dhar Dwivedi, Pooja Kumari

Abstract


This paper explains 2D numerical simulation and Characterization of Electrical parameter of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with HfO2 as a gate dielectric and Electrical parameters including; Threshold Voltage (Vt), Mobility (µ),Ion/Ioff, and Transconductance (gm), Sub threshold slope (SS) are extracted. The numerical simulation includes model for defect density of state and field dependent mobility model.


Keywords


Numerical Simulation; OTFT; gate dielectric

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Pooja Kumari, A. D. D. Dwivedi. Numerical Simulation and Parameter Analysis for Pentacene based Organic Thin Film Transistor with HfO2 Gate Dielectric. Journal of Semiconductor Devices and Circuits. 2019; 6(2): 28–34p.


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