Open Access Open Access  Restricted Access Subscription or Fee Access

Study and Analysis on Multi-gate MOSFET Design

Kamlesh Kumar Singh, Nilesh Yadav

Abstract


Abstract

Multi-gate MOSFET is the emerging technology that is used in the area of low-power VLSI design. Multi-gate devices provide much better advantages over conventional MOSFET. As less power dissipation, decrease size, and more operational value could be obtained. Multi-gate MOSFET devices also reduce cost of production. Thus, design of electronics devices based on multi-gate technology is beneficial in today’s requirement. Basic MOSFET due to its reduction in size shows short channel effects. In multi-gate MOSFET, these effects are decreased and better control over the channel is observed. In this paper, we have introduced multi-gate MOSFET and few devices, we have also done simulation of these designs and done their analysis too. Simple MOSFET is drawn on PSPICE in order to know the difference between the characteristics of multi-gate MOSFET and simple CMOS MOSFET. The transient response of the drawn circuits is studied and evaluated.

Keywords: Multi-gate, PSPICE, CMOS, simulation, AC analysis

Cite this Article

Nilesh Yadav, Kamlesh Kumar Singh. Study and Analysis on Multi-gate MOSFET Design. Journal of Semiconductor Devices and Circuits. 2020; 7(1): 1–7p.



Keywords


Multi Gate, PSPICE, CMOS, Simulation, AC Analysis

Full Text:

PDF

References


Colinge JP. FinFETs and other Multi-Gate Transistors. New Delhi: Springer Science+ Business Media, LLC; 2008.

Dennis Fitzpatrick. Analog Design and Simulation using Orcad Capture and Pspice, second edition. Elsevier Ltd.; 2018.

Sharda P Narwade, Anish U Bhurke, Swapnali Makdey. Study on Performance of 22nm Single Gate and Multi Gate MOSFET. International Journal of Scientific Engineering and Research.2016; 4(10):42–45p.

Singh D, Pradhan KP, Mohapatra SK, Sahu PK. Optimization of Underlap Length for DGMOSFET and FinFET. Procedia Computer Science.2015;57:448–453p.doi.org/10.1016/j.procs.2015.07.519

Cristoloveanu S. Future trends in SOI technologies. Journal of the Korean Physical Society. Dec 2001; 39:S52-S55.

Park J-T, Colinge J-P. Multiple-Gate SOI MOSFETs. IEEE Transactions on Electron Devices. Dec. 2002; 49(12):2222–2228.

Aniket Breed, Kenneth P Roenker. A Small-signal, RF Simulation Study of Multiple-gate MOSFET Devices. IEEE Topical Meeting on Silicon Monolithic ICs in RF Systems, Atlanta, GA, Sept 2004.

Colinge JP. FinFETs and other Multi-Gate Transistors. New Delhi: Springer Science+ Bussiness Media, LLC; 2008.

Colinge JP. Multiple-gate SOI MOSFETs. Solid. State. Electron. 2004; 48: 897–905. doi:10.1016/j.sse.2003.12.020.X.

Sun, V Moroz, N Damrongplasit, C Shin, TJK Liu. Variation study of the planar ground-plane bulk MOSFET, SOI FinFET, and trigate bulk MOSFET designs. IEEE Trans. Electron Devices. 2011; 58: 3294–3299.




DOI: https://doi.org/10.37591/josdc.v7i1.3988

Refbacks

  • There are currently no refbacks.


Copyright (c) 2020 Journal of Semiconductor Devices and Circuits

Publisher: STM Journals, an imprint of CELNET (Consortium e-Learning Network Pvt. Ltd.)

Address: A-118, 1st Floor, Sector-63, Noida, Uttar Pradesh-201301, India

Phone no.: 0120-478-1215/ Email: [email protected]