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Signal Integrity Analysis of Single Walled Carbon Nano Tube based Interconnects at 32 nm Technology Node

Purushottam Kumawat, Ashish Jha, Akansha Choudhary

Abstract


The rising demands for ultra-high-speed processors and portable devices have made the transistor and interconnect scaling a challenging issue in present days. In this work, the impedance parameter of copper and CNT based interconnects are calculated at 32 nm technology node for different lengths. The performances of CNT based interconnects are analyzed and compared with Cu based interconnects in terms of crosstalk. The conventional copper interconnects are not able to fulfil the various design requirements. They are facing many challenges because of reflections dispersion, ringing, attenuation and its variation with frequency. Due to this, the high-speed signals are distorted. The performance of parallel interconnection in conventional devices is also limited by the crosstalk due to coupling from neighboring signals. CNT based interconnects present a promising option for replacing the existing copper interconnects for global wire.

Keywords: Crosstalk, parasitic capacitance signal integrity

Cite this Article

Ashish Jha, Akansha Choudhary, Purushottam Kumawat. Signal Integrity Analysis of Single Walled Carbon Nano Tube based Interconnects at 32nm Technology Node. Journal of Semiconductor Devices and Circuits. 2018; 5(1): 33–42p.



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DOI: https://doi.org/10.37591/josdc.v5i1.570

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