Synthesis and Characterization of In2S3 Nanoflake Thin Film for Photosensor Applications

Abstract

Indium sulphide (In2S3) thin films in the form of nanoflakes are synthesized by using chemical vapour deposition method on glass substrate with the intension to test its photosensor applications. These as deposited nanoflake thin films are characterized for physicochemical properties using X-ray diffraction (XRD) pattern, energy dispersive X-ray (EDAX) analysis,
scanning electron microscopy (SEM) while optoelectronic properties were studied using optical and electrical characteristics obtained through UV-Vis transmission spectroscopy and I-V analysis under dark and light conditions, respectively. From XRD pattern peak orientation along (311), (222), (400) and (511) plane with an average crystallite size of ~85 nm was obtained. The elemental analysis for compositional confirmation of In2S3 material was carried with the help of EDAX spectra which represents observed and expected traces of elements. Surface morphology observed through SEM image reveals even and regular distribution of nanoflakes like structure accompanied with attachment of some granular particle over its petals (flakes) of an estimated average size of ~ 46 nm. The optical transmission spectrum reveals ~44% transmittance with an energy band gap of ~2.07 eV corresponding to defect state induced spin orbit splitting. I-V characteristics under dark and illumination condition represent 92% photoresponse which confirms probable application of In2S3 thin films in photovoltaic modules.

Cite this Article
Joshi RA. Synthesis and Characterization of In2S3 Nanoflake Thin Film for
Photosensor Applications. Journal of Thin Films, Coating Science Technology and Application. 2017; 4(3): 21–26p.