Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors

Abstract

Abstract

In this work, total 5722 individual simulation outputs are reported. The effects of drain voltage, gate voltage, aluminium mole fraction, and gate length on drain current are studied in AlGaAs/GaAs high electron mobility transistors (HEMTs). The linear region and saturation region are prominent in each drain characteristic curve. The drain current reduces in the structure of larger gate length. This work is useful to fabricate the HEMT based biomedical sensors.

Keywords: GaAs, drain current, drain voltage, gate voltage, gate length 

Cite this Article

Subhadeep Mukhopadhyay. Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors. Journal of Thin Films, Coating Science Technology and Application. 2018; 5(3): 30–40p.