Layout Design, Fabrication and Characterization of n-Channel MOSFET

Abstract

Primary force behind evolution of semiconductor industry is MOSFET, after its first IC based experimental demonstration in 1960s. It is fundamental working unit of most of the electronic circuits like cells in living being. Number of devices on a single chip has been increased with rapid phase with evolution of new technology of materials. Today there are more than 4 billion transistors are there on a single chip with effective channel length of 45 nm and beyond. A lot complexity has been involved in device fabrication. This paper deals with detailed design of layout, fabrication and characterization of n-channel metal gate MOSFET fabricated on <100>, p-type silicon substrate using standard process steps and minimum mask levels.

Keywords: Depletion, e-beam lithography, mask, drain characteristics, transfer characteristics