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Optimization of Indium Concentration for Obtaining Enhanced Performance of 980nm InxGa1-xAs/GaAs MQW VCSELs

Rinku Basak



In this work, an optimization of Indium concentration of 980 nm InxGa1-xAs/GaAs MQW VCSELs is presented with the aim of improving dynamic performance of the VCSEL. An improved modulation performance is obtained by optimizing Indium concentration of x=0.2. A high modal gain and low transparency carrier density contributes to a high optical output power for In0.2Ga0.8As/GaAs MQW VCSEL. A highest modulation bandwidth of 11.625 GHz is obtained for In0.2Ga0.8As/GaAs MQW VCSEL at 7.4 mA injection current and 5.1x10-16 cm2 differential gain. By increasing the differential gain from 5.1x10-16 cm2 to 10x10-16 cm2 a maximum modulation bandwidth of 16.5 GHz is obtained for In0.2Ga0.8As/GaAs MQW VCSEL.  

Keywords: VCSEL, MQW, output power, modulation response

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