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Effect of ETL layer thickness on perovskite (CH3NH3PbI3) solar cell

Ravi Shankar Yadav, Major G.S. Tripathi, Bramha P. Pandey

Abstract


Abstract: Thickness of ETL (Electron transport layer) shows important role in term of stability and efficiency of perovskite solar cells. In this paper the numerical simulation and extensive modeling have been performed on perovskite solar cell using perovskite material such as methyl ammonium lead Iodide (MAPbI3, MA=CH3NH3) with the help of SCAPS tool. The electrical properties of the MAPbI3 material used as active layer, have been calculated for different parameter such as open-circuit voltage (Voc), fill factor (FF), the power conversion efficiency (PCE), and short-circuit current density (Jsc) respectively. Capacitance-frequency (C-f) and capacitance-voltage (C-V) characteristics have been calculated for CH3NH3PbI3 perovskite solar cell. The inorganic copper iodide (CuI) material perform as the hole transport layer (HTL) in simulated structure of the perovskite solar cell. The simulation result shows that increasing the thickness of ETL decreasing the efficiency of perovskite solar cell.

Keywords: Perovskite solar cell, CH3NH3PbI3, CuI, Thickness, FF, Voc, Jsc, PCE, C-f and C-V

Cite this Article

Ravi Shankar Yadav, Major G.S. Tripathi, Bramha P. Pandey. Effect of ETL layer thickness on perovskite (CH3NH3PbI3) solar cell. Trends in Opto-Electro & Optical Communication. 2019; 9(1): 32–37p. 


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