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Interface Engineering of Graphene Multi-Junction InGaP/GaAs/InGaAs/Ge Solar PVC

Rashmi Chawla, Poonam Singhal, Amit Kumar Garg

Abstract


Abstract

The main impediment faced by solar Photo-Voltaic Cell (PVC) is the excitation of charge carriers by high and low energy photons to make them reach the conduction band as this superintends the output device current. To enhance the device current, intermediate engineering of solar PVC is the most prominent strategy. An Inter-Mediate Layer (IML) serves as a spectrally selective layer between the muti-junctions for tandem solar cell. This research work analyse the interface engineering of graphene as an ultrathin intermediate (charge recombination) layer for tandem thin film solar PVCs. The modelling and characterization of group III and V compound material based solar PVC, InGaP (1.88 eV)/GaAs (1.43 eV)/ InGaAs (0.98 eV), triple junction on Ge substrate with graphene is performed on SILVACO-Atlas. The interface investigation discerns that IML of graphene can contribute to device power conversion efficiency by increasing photo-generation rate and enhancing the absorption capacity.

Keywords: Atlas, efficiency, fill factor, intermediate layer, multi-junction solar cell, open circuit voltage, short-circuit current density

Cite this Article
Rashmi Chawla, Poonam Singhal, Amit Kumar Garg. Interface Engineering of Graphene Multi-Junction InGaP/GaAs/InGaAs/Ge Solar PVC. Trends in Opto-Electro & Optical Communications. 2018; 8(1): 1–7p.



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DOI: https://doi.org/10.37591/toeoc.v8i1.568

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