Monocrystalline Silicon Growth using the Process of Vibroturbulization

Abstract

Solar panels are powered by photovoltaic cells that capture solar energy and convert it into electrical current. Solar cells are a solar panel made from homogeneous single-crystal silicon. The cultivation of single-crystal silicon is carried out by the Czochralski method, in which, when a crystalline seed is injected onto the surface of a silicon melt, the atoms of which, when in contact with the seed, lose energy in the form of heat and freeze, which leads to silicon monocrystallization. The earth's gravity creates strong thermogravitational convection, leading to a violation of the stable single crystallization of silicon, which makes it impossible to obtain single-crystal silicon with a high degree of uniformity.The article presents a new developed method for growing homogeneous single-crystal silicon with a high degree of homogeneity, in which thermo gravitational convection that occurs under the action of gravity is eliminated by using controlled vertical vibration in a pre-calculated mode of the vibroturbulization process as intensive mixing of the internal components of the silicon melt during the growth process of homogeneous single-crystal silicon by the Czochralski method.