https://engineeringjournals.stmjournals.in/index.php/JoMSD/issue/feedJournal of Microelectronics and Solid State Devices2024-03-21T09:18:42+00:00Saritaelectronics.editor@conwiz.inOpen Journal Systems<p><strong>Journal of Microelectronics and Solid State Devices (JoMSD)</strong></p><p><strong>eISSN: 2455-3336</strong></p><p><strong>Click <a href="/index.php/JoMSD/about/editorialTeam">here</a> for complete Editorial Board</strong></p><p><strong><strong></strong></strong><strong><strong>Scientific Journal Impact Factor (SJIF):</strong> 6.031</strong></p><p><strong>Journal of Microelectronics and Solid State Devices (JoMSD) </strong>is a print and e-journal focused towards the rapid publication of fundamental research papers on all areas of Sloid state, Electronics and Devices. <strong>It's a triannual journal, started in 2014.</strong></p><p><strong><span><strong>Journal DOI no.: 10.37591/JoMSD</strong></span></strong></p><p><strong><span><strong><strong>Readership:</strong><span> </span></strong></span></strong>Graduate, Postgraduate, Research Scholar, Faculties, Institutions, and in Industries.</p><p><strong>Indexed in: </strong>Google Scholar, Journal TOC, Citefactor, Indian Science Abstracts, Advanced Science Index, SCI Journals, <a href="https://journals.indexcopernicus.com/search/details?id=125010">Index Copernicus (ICV</a> : 57.77)</p><p><strong>Focus and Scope Covers</strong></p><ul><li>Solid-State Devices</li><li>Light-emitting Diodes</li><li>Liquid-crystal Display</li><li>Transistor Amplifiers</li><li>Microelectronic circuits</li><li>Electrons, Bonds, Energy Bands and Device Physics</li><li>Metal-Oxide-Semiconductor Capacitor</li><li>Nano MOSFETs</li><li>Device modelling</li><li>Bipolar Transistor Devices</li><li>Micro/Nano Photonic Devices</li></ul><p><span>All contributions to the journal are rigorously refereed and are selected on the basis of quality and originality of the work. The journal publishes the most significant new research papers or any other original contribution in the form of reviews and reports on new concepts in all areas pertaining to its scope and research being done in the world, thus ensuring its scientific priority and significance.</span></p><p><strong>Submission of Paper: </strong><strong></strong></p><p>All contributions to the journal are rigorously refereed and are selected on the basis of quality and originality of the work. The journal publishes the most significant new research papers or any other original contribution in the form of reviews and reports on new concepts in all areas pertaining to its scope and research being done in the world, thus ensuring its scientific priority and significance.</p><p>Manuscripts are invited from academicians, students, research scholars and faculties for publication consideration.</p><p>Papers are accepted for editorial consideration through email <strong><a href="mailto:electronics@stmjournals.com">electronics@stmjournals.com</a> or <a href="mailto:electronics.editor@celnet.in">electronics.editor@celnet.in</a></strong></p><p><strong>Subject: </strong>Microelectronics and Solid state devices</p><p><strong>Abbreviation: JoMSD</strong></p><p><strong>Frequency</strong>: Three issues per year</p><p><strong><a href="/index.php/JoMSD/about/editorialPolicies#sectionPolicies">Peer Reviewed Policy</a></strong></p><p><strong><a href="/index.php/JoMSD/about/editorialTeam">Editorial Board</a></strong></p><p><a href="http://stmjournals.com/pdf/Author-Guidelines-stmjournals.pdf"><strong>Instructions to Authors</strong></a></p>https://engineeringjournals.stmjournals.in/index.php/JoMSD/article/view/7735Ab Initio Investigation on Half-Heusler Compounds CoVZ (Z = P, Bi, Sb, As): Understanding Structural, Electronic, Magnetic, and Elastic Behavior2024-03-21T09:18:42+00:00Pardeep Kumar Jangrapkjchem@gmail.comAnshul Singhpkjchem@gmail.comSukhender .pkjchem@gmail.com<p>The structural, electrical, mechanical, and magnetic properties of Half-Heusler CoVZ (Z= P, Bi, Sb, and As) compounds have been studied using the ab initio method. Here, we use the full potential linearized augmented plane wave (FP-LAPW) method, which is implemented by WIEN2k. The compounds CoVZ (Z= P, Bi, Sb, and As) are near to the Fermi level as implemented in the WIEN2k algorithm, exhibiting 100% spin polarization with finite band gaps of 0.61, 0.67, 0.65, and 0.68 eV, respectively. These materials are found to have semiconducting properties. The calculated magnetic moments of these compounds, CoVZ (Z= P, Bi, Sb, and As), are 1.31, 1.35, 1.27, and 1.20 μB. Here, we observe that the computed results of the algorithm and the Slater-Pauling rule have great tuning. The investigation leads us to the conclusion that every compound—aside from CoVAs and CoVSb—is ductile. A measure of a material's stiffness and flexibility is the bond index, denoted by the notation CP = C12 - C44. The same kind of result is shown by Cauchy pressure and Pugh's ratio. Covalent character is indicated by CoVAs' poisson ratio. Materials can be compared by placing them in decreasing order of hardness, for instance, CoVP > CoVBi > CoVSb > CoVAs.</p>2024-03-21T09:18:21+00:00Copyright (c) 2024 Journal of Microelectronics and Solid State Devices