Structural and Electrical Properties of Low-Energy Ion Beam Kr-Irradiated In/Se Bilayer
DOI:
https://doi.org/10.37591/jopc.v11i1.7038Abstract
In the present work, In (~50 nm) over Se (~50 nm) thin films were deposited successively on an Si substrate by e-beam evaporation method under 2×10–5 mbar pressure. The In/Se bilayers were irradiated with low-energy ion beams of 350 keV Kr+1 with fluence of 3 × 1016 ions/cm2. The sample was subsequently characterized for phase formation using X-ray diffraction and thickness profile using Rutherford backscattering spectrometry analysis. In the pristine sample, X-ray diffraction exhibited phase formation, confirming mixing. Rutherford backscattering spectrometry also confirmed mixing of the two layers in the pristine sample. It also confirms that Se from second layer is mixed to the third layer of Si (substrate layer). This mixing is increased greatly by Kr ion irradiation. According to scanning electron microscopy analysis, stone-like nanostructures of various sizes have formed in the pristine sample. The surface is smoothened by the Kr ion irradiation. In addition, temperature-dependent electrical measurements of the pristine sample were made. The pristine sample showed n type charge carriers as predicted by Hall measurement. The resistivity of the pristine sample exhibited semiconductor behaviour as the temperature rises. The Kr-irradiated sample has very high resistance of the order of megaohms. So, Hall coefficient, Seebeck, and resistivity measurements could not be carried out.References
Parlak M, Ercelebi C. The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films. Thin Solid Films. 1998; 322: 334–339.
Yudasaka M, Matsnoka T, Nakanishi N. Indium selenide film formation by the double-source evaporation of indium and selenium.Thin Solid Films. 1987; 146: 65–73.
Ando K, Katsui A. Optical properties and photovoltaic device applications of InSe films. Thin Solid Films. 1981; 76: 141–148.
Yudasaka M, Nakanishi N. Formation of InSe and GaSe deposited films and their electrical properties. Thin Solid Films. 1988; 156: 145–152.
Jasinski J, Swider W, Washburn J, Liliental-Weber Z, Chaiken A, Nauka K, Gibson GA, Yang CC. Crystal structure of κ-In2Se3. Appl Phys Lett. 2002; 81 (23): 4356.
Bidjin D, Popovi S, Elustka B. Some electrical and optical properties of In2Se3. Phys Status Solidi A. 1971; 6 (1): 295–299.
Chang KJ, Lahn SM, Chang JY. Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors. Appl Phys Lett. 2006; 89 (18): 182118.
Amory C, Bernede JC, Marsillac S. Study of a growth instability of γ-In2Se3. J Appl Phys. 2003; 94: 6945.
Eddike D, Ramdani A, Brun G, Tedenae JC, Leautard B. Phase diagram equilibria In2Se3–Sb2Se3 crystal growth of the -In2Se3 phase (In1.94Sb0.06Se3). Mater Res Bull. 1998; 33: 519–523.
Ye J, Soeda S, Nakamura Y, Nittono D. Crystal structures and phase transformation in In2Se3 compound semiconductor. Jpn J Appl Phys (P 1). 1998; 37 (8R): 4264.
Sahu SN. Preparation, structure, composition, optical and photoelectrochemical properties of vacuum annealed In-Se thin films. Thin Solid Films. 1995; 261: 98–106.
de Groot CH, Moodera JS. Growth and characterization of a novel In2Se3 structure. J Appl Phys. 2001; 89: 4336.
Bolse W. A refined model of the interface mixing in local thermal spikes. Nucl Instrum Methods Phys Res B: Beam Interact Mater Atoms. 1993; 80: 137–141.
Bolse W. Ion-beam induced atomic transport through bi-layer interfaces of low- and medium-Z metals and their nitrides. Mater Sci Eng R: Rep. 1994; 12:vii–viii.
Alurralde M, Caro A, Victoria M. Radiation damage cascades: liquid droplet treatment of subcascade interactions. J Nucl Mater. 1991; 183: 33–45. Commented [SS1]: AQ: It is not clear which author is meant by "I". Please consider using name instead of first person
Bala M, Gupta S, Tripathi TS, Varma S, Tripathi SK, Asokan K, Avasthi DK. Enhancement of thermoelectric power of PbTe:Ag nanocomposite thin films. RSC Adv 2015; 5: 25887–25895.
Gupta S, Agarwal DC, Tripathi SK, Tripathi A, Neeleshwar S, Avasthi DK. Study of ion beam synthesized nanostructured PbTe surface. Appl Surface Sci. 2013; 265: 124–129.
Ziegler JF. Interactions of ions with matter. [Online] Available at https://www.SRIM.org.
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