Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs

Abstract

Abstract

A maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current is again higher at larger doping concentration of AlGaN barrier layer. This simulation work will be helpful to experimentally fabricate the biomedical sensors in nanoelectronic regime in future.

Keywords: Drain current, aluminium mole fraction, doping concentration, gate length

Cite this Article

Subhadeep Mukhopadhyay. Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs. Journal of Semiconductor Devices and Circuits. 2018; 5(3): 7–17p.