Modeling of In0.53Ga0.47As Quantum Dot Solar Cell

Abstract

Abstract

Quantum dot solar cells have received tremendous attention for the next generation solar cell technology in the last decade. This paper exhibits the influence of In_0.53Ga_0.47As/GaAs quantum dots in a conventional p-i-n GaAs solar cell. The study reveals that insertion of In_0.53 Ga_0.47As/GaAs quantum dots in the p-i-n solar cell increases the short circuit current density as well as the overall conversion efficiency. When comparing a p-i-n cell with a p-i-n cell with quantum dots, the conversion efficiency increased from 27.07 to 30.58%.

Keywords: Quantum dots, solar cells, p-i-n, In_0.53Ga_0.47As

Cite this Article

Sayeda Anika Amin, Md. Tanvir Hasan. Modeling of In_0.53Ga_0.47As Quantum Dot Solar Cell. Journal of Semiconductor Devices and Circuits. 2016; 3(2):        27–31p.