InGaN Based p-i-n Solar Cell

Abstract

Abstract

A major hurdle in achieving ultrahigh efficiency solar cells is the availability of materials and corresponding device structures. The ternary alloy InGaN has the potential to achieve high efficiency due to its several advantages. However, the efficiency of a p-n InGaN solar cell is still quite low compared to other III–V technologies. In this work, with a view to attain better efficiency, inclusion of an intrinsic layer (i-layer) in the p-n structure of InGaN cell has been investigated. Additionally, effects of the intrinsic layer thickness on the photovoltaic properties have been taken into consideration. The electrical parameters of the device such as Jsc, Voc, η and EQE were evaluated. Compared to the conventional p-n structure the p-i-n InGaN structure showed better performance. It is noticed that, with the incorporation of i-layer the conversion efficiency of the p-n device is boosted up to 2%.

Keywords: Solar cell, InGaN, p-n, p-i-n, intrinsic

Cite this Article

Syed Salauddin Jeon, Sayeda Anika Amin, Md. Tanvir Hasan. InGaN based p-i-n solar cell. Journal of Semiconductor Devices and Circuits. 2016; 3(3): 1–5p.