Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory

Abstract

The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium mole fraction. The drain current is higher at larger thickness of AlGaN barrier layer. The drain current is higher at larger doping concentration of AlGaN barrier layer. The formation of 2-DEG is directly demonstrated in this work by the investigation on conduction band engineering. The simulation results of this work is completely matching with the previously derived mathematical expressions. This work will be helpful to experimentally fabricate the biomedical sensors in nanoelectronics.

Keywords: Double heterojunction, aluminium mole fraction, doping concentration, gate length 

Cite this Article

Subhadeep Mukhopadhyay, Sanjib Kalita. Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory. Journal of Semiconductor Devices and Circuits. 2017; 4(3): 11–20p.