Electro Thermal Simulation of AlGaN/GaN HEMT

Authors

  • Arun Dev Dhar Dwivedi Department of Electrical and Electronics Engineering, Poornima University Jaipur
  • Suchitra .

DOI:

https://doi.org/10.37591/josdc.v6i2.3342

Keywords:

AlGaN/GaN High-Electron-Mobility-Transistor (HEMTs) devices

Abstract

This paper presents electro thermal simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) without AlN layer nucleation layer and AlGaN/GaN HEMT by introducing AlN nucleation layer. With the help of Silvaco ATLAS lattice temperature of the devices figured out. It is observed that self heating in AlGaN/GaN HEMT without AlN nucleation layer is higher than the self heating in AlGaN/GaN HEMT with AlN nucleation layer. Simulation of lattice temperature inside the device has been performed in two cases.  The results shows the lattice temperature decreases by approximately 150ºC in case of AlGaN/GaN HEMT with AlN nucleation layer as compared to lattice temperature in AlGaN/GaN HEMT without AlN nucleation layer. Lattice temperature should be minimized as much as possible because the device temperature is directly related to reliability and life time of the device.

 

Author Biography

  • Arun Dev Dhar Dwivedi, Department of Electrical and Electronics Engineering, Poornima University Jaipur
    Arun Dev Dhar Dwivedi has received the M.Sc. degree in Physics (Electronics) from BHU, Varanasi, India in 2003 and Ph.D. degree in Electronics Engineering from IIT (BHU) Varanasi, in 2010. He is currently working as Professor in Electrical and Electronics Engineering, Poornima University Jaipur. He Worked as a Visiting Scientist in Nanoelectronic group at the Laboratory IMS-CNRS-UMR5218, University of Bordeaux, Talence, France during 2014-2015. He also worked as senior Device modeling Engineer in Spice modeling division of  Silvaco Singapore office and as an Assistant Professor at Central University of Rajasthan and Central university of Jharkhand. He has given several invited talks in India and abroad at international meetings. He also worked as SRF and JRF at centre for research in microelectronics, IIT BHU Varanasi.  He is senior member of IEEE and Branch counselor IEEE students branch Poornima University Jaipur. He is in Editorial board member of International Journal of Advanced Applied Physics Research (IJAAPR), International Journal of Electrical Communication Engineering (IJECE), International Journal of Microelectronics and Digital Integrated Circuits (IJMDIC), International Journal of Analogue Integrated Circuits (IJAIC), International Journals of Power Electronics Controllers and Converters (IJPECC). He has been awarded by Early Career Researchaward from science and engineering research board (SERB) Department of Science and Technology (DST) Government of India and research grant of 50 lacks has been approved for his project entitled " Numerical simulation and compact modeling of organic thin film transistors for future flexible electronics". He has published more than 25 papers in international Journals and 25 papers in conference/seminars. He is reviewer of various international journals like IEEE transaction on electron devices, Organic electronics, journal of electronic materials etc.

    His research interest includes Microelectronics and VLSI design, Optoelectronics and Optical communication, Organic electronics, Semiconductor device Physics, Nanoelectronics, Technology Computer Aided Design (TCAD), EDA, Compact device modeling for IC design, Analog and Digital Integrated circuits and Infrared photodetectors.

     

References

Cite this Article

Suchitra, A. D. D. Dwivedi. Electro Thermal Simulation of AlGaN/GaN HEMT Design. Journal of Semiconductor Devices and Circuits 2019; 6(2): 18–27p.

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Published

2019-09-23

Issue

Vol. 6 No. 2 (2019)

Section

Research Articles