Emerging Trends in Applications of Antimonide Semiconductor Alloys in Wireless Communications

Authors

  • Alla Srivani
  • Vedam RamaMurthy Department, T.J.P.S College, Guntur, Andhra Pradesh, India
  • G. Veeraraghavaiah Department of Physics, P.A.S College, Pedanandipadu, Guntur, Andhra Pradesh, India.

Abstract

We investigate inter diffusion in Antimonide alloy hetero structures by means of bright-field transmission electron microscopy (TEM). Samples grown by metal organic molecular beam epitaxy (MOMBE) are subjected to thermal treatment under both In-rich and Sb-rich conditions. Concentration profiles of the group-III elements are determined by evaluating changes of thickness fringes of cleaved 90° wedge specimens on a nanometer scale. We present first results of our inter diffusion experiments and discuss these in view of the annealing conditions. We show that group-III vacancies play a dominant role in Antimonide alloy inter diffusion and that the inter diffusion coefficient has a non-linear concentration dependency.

Keywords: Antimonide alloy, optoelectronic semiconductor devices, group-III vacancies

Cite this Article

Vedam Rama Murthy, Alla Srivani, Veeraraghavaiah G. Emerging Trends in Applications of Antimonide Semiconductor Alloys in Wireless Communications. Journal of Semiconductor Devices and Circuits. 2015; 2(2): 1–4p.


 

Published

2015-12-03

Issue

Vol. 1 No. 1 (2015)

Section

Research Articles