Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review

Authors

  • Servin Rathi School of Electronics and Electrical Engineering, Sungkyunkwan University,Korea
  • Gil Ho Kim School of Electronics and Electrical Engineering, Sungkyunkwan University,Korea

Abstract

A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.

Keywords: HEMT, MODFETs, Semiconductor, Fabrication

Published

2015-12-03

Issue

Section

Research Articles