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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node

Nikhil Saxena, chandramoham K, Sapna Navre, Sonal Soni


In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress is largely dominated by the materials science community due to many still existing materials-related obstacles for realizing practically competitive transistors. Compared to graphene, carbon nanotube provides better properties for building field-effect transistors, and thus, has higher chances for eventually becoming a production technology. So, in this work it is used carbon nanotube field effect transistor in place of silicon based transistor for making a ring oscillator.


Keywords: Carbon nanotube, power consumption, leakage current, silicon

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eISSN: 2249–474X