Transient Analysis of Electronic Circuits Including Zener Diodes

Authors

  • Mohamed Mostafa Saied Professor (Emeritus), Independent Researcher, Giza, Cairo, 6 Hassan-Mohamed Street, El-Haram, Giza

Keywords:

Zener diodes, SPICE, Mathematical model, Semiconductor device model, Circuit analysis, Modeling Semiconductor devices, Electronic circuits, Mathematica

Abstract

This paper addresses the transient analysis of the electronic circuits incorporating Zener diodes. It starts with suggesting a new Zener diode model. The model is based on efficiently utilized step functions of the applied voltage. It includes also the diode’s main technical parameters such as its resistances in both the forward and reverse current directions as well as its Zener’s breakdown voltage. The sharp discontinuities of the step-functions are dealt with by adopting equivalent approximations in terms of inverse hyperbolic tangent expressions. The resulting idealized step-shaped dependence of the diode’s resistance on voltage exhibits an extremely small value for positive voltages and extremely high resistances for negative voltages with magnitudes larger than the Zener voltage. Otherwise, the diode shows a resistance which is equal to the high reverse value. A compact Mathematica code written using the recent Version 12.2 is derived and applied in order to perform the time-domain analysis of three representative case studies. In addition to the usual display of the circuits’ currents and voltages as functions of time, parametric plots are also presented for illustrating their trajectories, in which the breakdown phenomenon of the diode is clearly manifested and recognized. Voltage sources of both sinusoidal as well as ramp-shaped time wave forms are considered. The computed results are presented in order to demonstrate the advantage, the applicability and the clear ease of implementation of the suggested procedure.

Author Biography

  • Mohamed Mostafa Saied, Professor (Emeritus), Independent Researcher, Giza, Cairo, 6 Hassan-Mohamed Street, El-Haram, Giza

    Received the B.Sc.  Degree (Honors) in Electrical Engineering from Cairo University, Egypt in 1965, then the Dipl.-Ing. and Dr-Ing. Degrees from RWTH Aachen, Germany, in 1970 and 1974. From 1974 to 1983, he was at Assiut University, Egypt. In 1983, he joined Kuwait University where he served as full professor and EE Department Chairman. He spent one-year sabbatical leave (1998) as a Visiting Professor at Cairo University, Egypt. Since his retirement in 2009, Prof. Saied works as an Independent Researcher, Giza, Cairo, Egypt. He is an IEEE Senior Member since 1984. 

References

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Published

2022-03-12

Issue

Section

Articles