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The Comprehensive Study of Gallium Nitride (GaN) Semiconductor Technology

Hardik Modi, Sagarkumar Patel, Shaili Joshi, Nupur Shah

Abstract


Silicon is an important material in the field of semiconductors because of its special qualities. It has good semiconductor properties, is affordable, and can be found easily. However, it is becoming clear that silicon-based devices are reaching their limits in terms of what they can do. As a result, the search of alternative materials has been initiated. Gallium Nitride (GaN) is one such material. GaN is a type of semiconductor possessing a wider energy bandgap. This means that it can handle higher voltages and frequencies than silicon. GaN has shown great promise in various areas and could potentially replace silicon in certain applications. In this review paper, we will explore the potential of GaN as a replacement for silicon in semiconductors. We will discuss its history, properties, and how it can be used in different ways.


Keywords


Silicon, Gallium Nitride (GaN), Wide bandgap, Semiconductor

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References


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