Numerical Simulation and Modeling of Graphene Field Effect Transistors for High Frequency Applications

Abstract

Abstract

In this paper numerical simulation of graphene field effect transistor (GFET) has been performed using finite element method by solving Poisson's equation, continuity equation and energy balance equation self consistently. Various performance characteristics including charge distribution, band gap energy, transfer and output characteristics, electrostatic potential distribution and transconductance have been extracted.

Keywords: Graphene field effect transistor (GFET), energy balance equation, mobility, ambipolar, numerical simulation

Cite this Article

Ashish Jha, Dwivedi ADD. Numerical Simulation and Modeling of Graphene Field Effect Transistors for High Frequency Applications. Journal of Microelectronics and Solid State Devices. 2018; 5(1): 27–33p.