Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer

Abstract

Abstract

In this work, the simulation studies are performed on high electron mobility transistor (HEMT) structures using the SILVACO-ATLAS software tool. The drain characteristics of HEMT structures is investigated with respect to the Aluminium mole fraction, drain voltage, gate voltage, and gate length at 30 nm thickness of AlGaN nano-layer. The simulation studies on the effect of gate length to control the drain characteristics are a novelty of this work. The reported trends of drain characteristics in this work may be a useful prediction to fabricate the HEMTs experimentally.

Keywords: Drain current; Drain voltage; Gate voltage; Gate length; Mole fraction

Cite this Article

Subhadeep Mukhopadhyay, Sanjib Kalita. Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs corresponding to the 30 nm of AlGaN Nano-Layer. Journal of Semiconductor Devices and Circuits. 2017; 4(1): 8–16p.