Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh

Abstract

Abstract

In this work, total 22584 individual simulation-outputs are reported according to the performed simulation-studies on the microelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool on the basis of already established theories related to the semiconductor-physics of HEMTs. In this work, the drain characteristics are investigated with respect to the aluminium mole fraction, drain voltage, gate voltage, gate length and thickness of AlGaN nano-layer. The theoretical investigation on the effect of gate length to control the drain characteristics is a novelty of this work. A large-scale data-analysis in simulation-studies is another novelty of this work. The reported trends of drain characteristics in this work may be a useful prediction to fabricate the microelectronic HEMTs experimentally. In this work, total 120 individual HEMT-structures are simulated. This research work is helpful to establish a low-cost microelectronics laboratory by Mukhopadhyay in the National Institute of Technology (NIT) Arunachal Pradesh, under the Ministry of Human Resource Development (Government of India). This academic facility will be helpful to support the mission of the Ministry of Electronics and Information Technology of the Government of India. Also, this academic facility will be stimulating the social-development of the Indian state Arunachal-Pradesh administratively.

Keywords: Microelectronic, mole fraction, drain current, drain voltage, gate voltage, gate length, thickness

Cite this Article

Subhadeep Mukhopadhyay. Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh. Journal of Semiconductor Devices and Circuits. 2017; 4(2): 6–28p.