Simulation of Threshold Voltage Variation of Enhancement Mode n-channel MOSFET

Abstract

Abstract

The paper focuses on simulation of variation of threshold voltage as a function of effective channel length of the short-channel MOSFETs with a Gaussian-like doping profile. An investigation of short channel effect (SCE) in deep submicron region has been carried out. The validity of the proposed simulation is shown by comparing the results with the numerical calculation and simulation of data obtained by using the commercially available simulation software. Finally, reverse short channel effect (RSCE) has been observed in the results of the simulation and hence the correlation between halo doping and the occurrence of this effect has been shown from the results.

Keywords: n-channel MOSFET, threshold voltage, halo effect, short channel effect, reverse short channel effect.

Cite this Article

Sandip Bhattacharya, Ankita Dey. Simulation of Threshold Voltage Variation of Enhancement Mode n-channel MOSFET. Journal of Semiconductor Devices and Circuits. 2017; 4(2): 34–40p.