Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors

Abstract

Abstract

Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.

Keywords: Doping, drain current, drain voltage, quantum well

Cite this Article

Sanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep Mukhopadhyay. Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors. Journal of Semiconductor Devices and Circuits.2016; 3(2): 32–36p.