Variations of Source Current in the Double-Heterojunction HEMTs

Abstract

Abstract

In this report, we have studied the variations in source current with respect to drain voltage corresponding to the double heterojunction (DH) high electron mobility transistors (HEMTs). Also, the effects of gate voltage and aluminium mole fractions on source current are studied. In this work, the highest source current achieved is 3.3 mA. This work may be useful to design many nanoelectronic HEMTs.

Keywords: Source current, drain voltage, gate voltage, mole fraction

Cite this Article

Sanjib Kalita, Subhadeep Mukhopadhyay. Variations of Source Current in the Double-Heterojunction HEMTs. Journal of Semiconductor Devices and Circuits. 2016; 3(3):        19–24p.