Open Access
Subscription or Fee Access
Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review
Abstract
A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.
Full Text:
PDFDOI: https://doi.org/10.37591/josdc.v2i1.5149
Refbacks
- There are currently no refbacks.
Copyright (c) 2021 Journal of Semiconductor Devices and Circuits
Publisher: STM Journals, an imprint of CELNET (Consortium e-Learning Network Pvt. Ltd.)
Address: A-118, 1st Floor, Sector-63, Noida, Uttar Pradesh-201301, India
Phone no.: 0120-478-1215/ Email: [email protected]