Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review

Authors

  • Servin Rathi School of Electronic and Electrical Engineering, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
  • Gil-Ho Kim School of Electronic and Electrical Engineering, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea

DOI:

https://doi.org/10.37591/josdc.v2i1.5149

Abstract

A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.  

Author Biography

  • Servin Rathi, School of Electronic and Electrical Engineering, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea

     

    School of Electronics and Electrical Engineering,
    Sungkyunkwan University,Korea

Downloads

Published

2021-01-22

Issue

Vol. 2 No. 1 (2015)

Section

Review Articles