Emerging Trends in Applications of Antimonide Semiconductor Alloys in Wireless Communications

Abstract

We investigate inter diffusion in Antimonide alloy hetero structures by means of bright-field transmission electron microscopy (TEM). Samples grown by metal organic molecular beam epitaxy (MOMBE) are subjected to thermal treatment under both In-rich and Sb-rich conditions. Concentration profiles of the group-III elements are determined by evaluating changes of thickness fringes of cleaved 90° wedge specimens on a nanometer scale. We present first results of our inter diffusion experiments and discuss these in view of the annealing conditions. We show that group-III vacancies play a dominant role in Antimonide alloy inter diffusion and that the inter diffusion coefficient has a non-linear concentration dependency