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Microhardness of II-VI and III-V Semiconductors

Mritunjai Kr. Pathak, Madhu Sudan Dutta, Paramanand Mahto, Rajendra Nath Sinha, Ashok Kumar Gupta

Abstract


A correlation between microhardness and bond hardness of II-VI and III-V semiconductors is presented in this study. Bond hardness is calculated using valence electron number, covalent / ionic radius and co-ordination number of bonded atoms of the tetrahedral semiconductors. The covalent and ionic contributions to bond hardness are separately calculated to get resultant bond hardness. Results obtained using the correlation agrees well with the reported, experimental and theoretical values of other researchers.

Keywords


atomic stiffness, bond hardness, microhardness, partial ionicity

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References


V. Kumar, J. K. Singh and G. M. Prasad, “Elastic properties of elemental, binary and ternary semiconductor materials”, Ind. J. Pure & Appl. Physics, vol. 53, pp. 429-435, 2015.

M. S. Dutta, M. K. Pathak and P. Mahto, “Bulk modulus of group-IV and its compound semiconductors”, J. Alloys and Comp., vol. 695, pp. 3547-3551, 2017.

A. S. Verma, “Extant ionic charge theory for bond orbital model based on the tight binding method: A semi-empirical model applied to wide band gap II-VI and III-V semiconductors” Material Science in Semiconductor Processing, vol. 29, pp. 2-15, 2015.

S. B. Mirov, “Erbium laser-pumped continuous wave microchip Cr2+: ZnS and Cr2+: ZnSe laser”, Opt. Lett., vol. 27, pp.909-911 2002.

S. Zhang, D. Li, J. Y. Li, Z. Y. Fang, X. L. Fu, and J. Xiao, Z. J. Peng, “ Self assembly of tetrapod shaped Cds nanostructures into 3D networks by a transverse growth process” Nanotechnology, vol. 22(17), pp. 175601, 2011.

A. H. Reshak, “First principle calculation of the linear and non-linear optical response for GaX(X= As, Sb, P)”, Eur. Phys. J. B-Condensed matter, vol. 47, pp. 503-508, 2005.

O. Boyraz, B. Jalali, “Demonstration of silicon Raman Laser”, Optical Express, vol. 12(21), pp. 5269-5273, 2004.

D. R. Lide ( Ed. ), Hand book of Chemistry and Physics 80th ed., CRC Publication 1999-2000; M. Weber ( Ed.), Handbook of Optical Materials (CRC Publication) 2003.

V. Kumar and A. K. Shrivastava, and V. Jha,“Bulk modulus and microhardness of tetrahedral semiconductors”, J. Phys. Chem. Solids, vol. 71, pp. 1513-1520, 2010.

S. K. Gorai, “Estimation of bulk modulus and microhardness of tetrahedral semiconductors”, J. of Phys. Conference Series, vol. 365(1), pp. 012013(1-4), 2012.

J. N. Plendl, S. S. Mitra, and P. J. Gielisse, “Compressibility, cohesive energy and hardness of non metallic solids”, Phys. Status Solidi, vol. 12, pp. 367-374, 1965.

A. S. Verma, “ Correlation between ionic charge and optical properties of Zinc blende and complex crystal structured solids” Phys. Stat. Sol.(b), vol. 246(1), pp. 192-199, 2009).

L. Garbato and A. Rucci, “Microhardness of tetrahedrally bonded semiconductors”, Phil. Mag., vol. 35, pp. 1681-1684, 1977.

K. Li, X. Wang, F. Zhang and D. Xue, “Electronegativity identification of Nobel superhard materials”, Phys. Rev. Lett., vol. 100, pp. 235504(1-4), 2008.

Y. - J. Wang and C. - Y. Wang, “Mechanical properties and electronic structure of superhard diamond like BC5: A first principles study”, J. Appl. Phys., vol. 106, pp. 043513(1-12), 2009.

X. - J. Guo, B. Xu, Z. - Y. Liu, D. - L. Yu., J. - L. He, and L. - C. Guo, “Theoretical hardness of wurtzite structured semiconductors” Chin. Phys. Lett., vol. 25(6), pp. 2158-2160, 2008.

H. - Y. Chung, M. B. Weinberger, J. B. Levine, A. Kavner, J. - M. Yang, S. H. Tolbert and R. B. Kaner, “ Synthesis of ultra-incompressible hard material” Science, vol. 316, pp. 436- 439, 2007.

R. W. Cumberland, M. B. Weinberger, J. J. Gilman, S. M. Clark, S. H. Tolbert and R. B. Kaber, “ Osmium diboride an ultra-incompressible hard material” J. Am. Chem. Soc. Vol. 127(20), pp. 7264-7725, 2005.

U. Lundin, L. Fast, L. Nordstrom, B. Johansson, J. M. Wills and O. Erikson, “Transition metal dioxide with a bulk modulus comparable to diamond”, Phys. Rev. B, vol. 57(9), pp. 4979-4982, 1998.

J. C. Phillips, “ Dielectric definition of electronegativity” Phys. Rev. Lett., vol. 20, pp. 550-553, 1968; “ Ionicity of chemical bond in crystal” Rev. Mod. Phys., vol. 42(3), pp. 317-356, 1970.

J. A. Van Vechten, “Quantum dielectric theory of electronegativity in covalent systems” Phys. Rev., vol. 182(3), pp. 891-905, 1969.

J. C. Phillips and J. A. Van Vechten, “ Dielectric classification of crystal structures, ionization potential and band structure” Phys. Rev. Lett., vol. 22(14), pp. 705-708, 1969 “ New sets of tetrahedral co-valent radii”, Phys. Rev. B, vol. 2(6), pp. 2160-2167, 1970.

B. F. Levine, “A new contribution to the non linear optical susceptibility arising from unequal atomic radius”, Phys. Rev. Lett., vol. 25(7), pp. 440-442, 1970; “ d- electron effect on bond susceptibility and ionicities” Phys. Rev. B, vol. 7(6), pp. 2591-2600, 1973 ; “ Bond susceptibility and ionicities in complex crystal structures”, J. Chem. Phys., vol. 59(3), pp. 1463-1486, 1973.

N. E. Christensen, S. Satpathy, Z. Pawlowska, “Bonding and ionicity in semicondcutors”, Phys. Rev. B, vol. 36(2), pp. 1032-1050, 1987.

A. Garcia and M. L. Cohen, “First-principal ionicity scales. I. charge asymmetry in the solid state “, Phys. Rev. B, vol. 47(8), pp. 4215-4220, 1993.

Communicated to J. Of American Chemical Society

M. k. Pathak, M. S. Dutta, R. K. Ranjan and P. Mahto, “Bond Hardness and Mechanical Properties of ANB8-N semiconductors and their alloys”, Int J. of Engineering, Science and Mathematics, vol. 6(6), pp. 357-388, 2017.

K. Y. Li and D. F. Xue, “Hardness of materials: Studies at levels from atoms to crystals”, Chin. Sc. Bulletin, vol. 54(1), pp. 131-136, 2009.

V. Kumar, G. M. Prasad, A. R. Chetal, and D. Chandra, “Microhardness and bulk modulus of binary tetrahedral semiconductors”, J. Phys. Chem. Solids, vol. 57, pp. 503-506, 1996.


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