Reflectance analysis for SOI application using semiconductor materials
DOI:
https://doi.org/10.37591/josdc.v9i1.6352Keywords:
reflectance, Plane wave, expansion method, Semiconductor-Glass grating, SOIAbstract
This work comprehensively investigates the high reflectance of semiconductor-glass (InP-FS, GaAs-BSG, Ge-BK7, Ge-BSG,GaAs-FS) grating SOI structure at wavelength 1.55m. The simulation results indicated that the reflectivities for InP-FS, Ge-BSG, Ge-BK7, GaAs-FS, and GaAs-BSG grating SOI structures are 99.01 percent, 99.03 percent, 99.20 percent, and 99.29 percent, 99.47 percent at wavelength 1.55m, respectively. The plane wave expansion approach is used in this simulation. When compared to the old outcome, the current simulation produces a more effective resultReferences
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