Design and Analysis of Inverters using Double Gate MOSFET

Abstract

Abstract

The double gate MOSFET is a form of MOSFET where two gates are fabricated along the length of the channel, one after another. There are several applications of double gate MOSFETs. It is possible to design logic gates using double gate MOSFETs. It is one of the digital applications of it. This paper interprets the design and analysis of different types of inverters using DG-MOSFET. The advantages of using DG-MOSFET are: it allows higher current drive and it is prophesized to show higher tolerance of scaling. The gate length (L_G) is kept constant at 20 nm. The gate voltage varies from 0 to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (I_ON) and OFF-state current (I_OFF) are found 1.9203x10^-3 and 6.57627x10^-10 A/µm respectively. The leakage current is low for the device with HfO₂ as compared to that for the device with ZrO₂. The subthreshold swing (SS) is 56.97 mV/dec for the device with HfO2.

Keywords: DG-MOSFET, logic gates, inverter, HSPICE, Silvaco Tcad

Cite this Article

Md. Ibnul Bin Kader Arnub. Design and Analysis of Inverters Using Double Gate MOSFET. Journal of Semiconductor Devices and Circuits. 2017; 4(1): 1–7p.