Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications

Abstract

Abstract

We report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this work, larger quantum well depth corresponds to the larger drain current at any particular thickness of AlGaN nano-layer. In this work on nanoelectronic HEMTs, the maximum achieved saturation drain current is considerably high as 3.61 mA at the gate voltage of 1 V with doping concentration of 3×10¹⁸ cm^-3 related to the AlGaN nano-layer thickness of 30 nm. Total 2574 individual simulation outputs are reported in this work. This work will be helpful to fabricate and experimentally characterise the DH-HEMTs for industrial applications.

Keywords: Double heterojunction, drain current, drain voltage, quantum well

Cite this Article

Sanjib Kalita, Subhadeep Mukhopadhyay. Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications. Journal of Semiconductor Devices and Circuits. 2016; 3(3): 6–18p.