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On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness

A. Kanni Raj

Abstract


ABSTRACT : ILO based MOTFT is fabricated with PBZ gate  dielectric. PBZ is formed over  doped Si  substrate by cheap sol-gel process. Thin film PBZ is analysed with XRD, UV-Vis and AFM. IZO is used as bottom gate to contact TFT. This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent e-mobility 4.5cm2/V/s, with on/off ratio 5x105 and sub-threshold swing 0.35V/decade.

 

 


Keywords


Electronics, ILO, MOTFT, nanofilm, dielectric, Perovskite, PBZ, sol–gel, transistor

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References


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DOI: https://doi.org/10.37591/jotcsta.v6i3.3481

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