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Internal Lattice Structure and Local Order of Ge Atoms Structure in Amorphous Mn doping GeTe Thin Films
Abstract
Phase-change Magnetic materials (PCMMs) represent the leading candidates for universal data storage devices, which exploit the large difference in the physical properties of their transitional lattice structures. Here, an experimental study was done to investigate the internal lattice structure and local order of Ge atoms in amorphous Mn doping GeTe thin films. The microstructure of the as-deposited films of Ge1-xMnxTe thin films (with x = 0.06, 0.13, 0.52 and 0.61) were studied by X-ray diffraction (XRD). The XRD patterns emphasized that the as-deposited films are amorphous. The local orders of Ge atoms in a-Ge1-xMnxTe thin films were demonstrated using Raman scattering technique. The finding results showed that the amorphous films with different concentration of Mn exhibits Raman shifts, which were dominated by four peaks with various intensities located at 74, 123, 159, and 216 cm-1.In addition, the results also showed that when the Mn contents in a-Ge1-xMnxTe thin film were less than 5% the local structure of the films was not affected by the Mn Corporation.
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References
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