Memristor Modelling for Common Source Amplifier Using 180 nm Technology

Authors

  • Herman Al Ayubi School of Information & Communication Technology, Gautam Buddha University, Greater Noida, U.P., India
  • Navaid Z. Rizvi School of Information & Communication Technology, Gautam Buddha University, Greater Noida, U.P., India
  • Piyush Kumar Mishra School of Information & Communication Technology, Gautam Buddha University, Greater Noida, U.P., India

DOI:

https://doi.org/10.37591/jovdtt.v5i3.1649

Abstract

The objective of this research paper is on memristor modeling for common source amplifier circuit using cadence virtuoso tool at gpdk 180 nm technology. A memristor is the fourth element count after resistor, inductor and capacitor in fundamental electrical circuits assumption is proposed by Leon Chua, its characteristics is based on already occurred principles of voltages (V), current (I), flux (ᵩ) and charge (q). Ohm’s law states relation voltage to current is directly proportional by (V=IR), charge is directly proportional to voltage (q=CV), and relation between current to flux (φ=LI) and, as above equations represents that connection between flux (ᵩ) and the charge (q).

Keywords: GPDK (generic process design kit), TEAM (ThrEshold adaptive memristor), memristors, SMCS (single memristor common source amplifier), DMCS (double memristor common source amplifier)

Cite this Article

Al Ayubi Herman, Rizvi Navaid Z, Mishra Piyush Kumar. Memristor Modelling for Common Source Amplifier using 180 nm Technology. Journal of VLSI Design Tools and Technology. 2015; 5(3): 45–54p.


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Published

2019-03-11

Issue

Vol. 5 No. 3 (2015)

Section

Articles

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