Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold Regime

Authors

  • Tarun Kumar Sachdeva Department of Electrical Engineering, YMCA University of Science and Technology, Faridabad, Haryana, India
  • S. K. Agarwal Department of Electrical Engineering, YMCA University of Science and Technology, Faridabad, Haryana, India
  • Alok K. Kushwaha Professor and Assistant Dean Academic, Waljat College of Applied Science, Muscat, Oman

DOI:

https://doi.org/10.37591/jovdtt.v8i2.731

Abstract

The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical gate all around MOSFET offer high drive-current (Ion), low leakage current (Ioff), superior On-Off current ratio and hence enhanced gain. Thus, for ultra-low power applications surrounding nanowire contemplated as superior aspect. In the present study, all the device performances are investigated through ATLAS device simulator from Silvaco.


Keywords: Cylindrical gate all around (CGAA), Drain Induced Barrier Lowering (DIBL), Short channel effects (SCE)

Cite this Article
Tarun Kumar Sachdeva, S.K. Agarwal, Alok K Kushwaha. Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold Regime. Journal of VLSI Design Tools & Technology. 2018; 8(2): 49–54p.

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Published

2018-07-20

Issue

Vol. 8 No. 2 (2018)

Section

Articles

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