Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application

Authors

  • Gopinath Palai Head (ECE), Dean (R&D)
  • S. K. Sahoo

DOI:

https://doi.org/10.37591/toeoc.v3i2.1890

Abstract

Abstract

Optical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power.

Keywords: SG-SOI, PWE, power

Author Biography

  • Gopinath Palai, Head (ECE), Dean (R&D)
    Department of Electronics and communication engineering, Gandhi Institute for Technological Advancment GITA, Janla, Bhubaneswar

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Published

2019-04-01

Issue

Vol. 3 No. 2 (2013)

Section

Research Articles