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Optimization of FLOTOX in EEPROM Design
Abstract
Abstract: Electrically Erasable Programmable Read-Only Memory (EEPROM) is a non-volatile memory (NVM) which is used in computers, integrated into microcontrollers for smart cards and remote keyless system, and other electronic devices to store relatively small amounts of data but allowing individual bytes to be erased and reprogrammed. Here the sizes of the floating gate & control gate have been altered to find the impacts for programming events and determine the optimum size to enhanced performance. The result shows that the Si-SiO2 and Ge-SiO2 show 98.75% EEPROM performance. The small gap between the control gate and floating gate gives 36.66 times and infinite times better performance than the normal gap and large gap sequentially between them.
Keywords: Control gate, EEPROM, floating gate, NVM, optimum
Cite this Article Farhana Sharmin. Optimization of FLOTOX in EEPROM Design. Journal of Semiconductor Devices and Circuits 2019; 6(1): 1–9p.
Keywords
References
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